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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
0
April 2008
FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
30V, 40A, 15m Features
r DS(ON) = 15m, VGS = 10V, ID = 35A r DS(ON) = 18.5m, VGS = 4.5V, ID = 35A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability RoHS Compliant
tm
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Application
DC / DC Converters
D G S
G
D
D-PAK (TO-252)
I-PAK (TO-251AA) GDS
S
(c)2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4
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1
FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25 C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RJA = 52oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature
o
Ratings 30 20 40 36 11 Figure 4 25 40 0.27 -55 to 175
Units V V A A A A mJ W W/oC
o
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
3.75 100 52
oC/W o o
C/W C/W
Package Marking and Ordering Information
Device Marking FDD8878 FDU8878 F F Device FDD8878 FDU8878 Package TO-252AA TO-251AA Reel Size 13" Tube Tape Width 12mm N/A Quantity 2500 units 75 units
Electrical Characteristics TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V V DS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC 1.2 0.011 0.014 0.018 2.5 0.015 0.0185 0.024 V
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge (VGS = 10V) V DD = 15V, ID = 35A V GS = 4.5V, RGS = 16 7 79 38 27 129 97 ns ns ns ns ns ns V DS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA 880 195 110 3.1 19 10 0.9 2.6 1.7 4.5 26 14 1.3 pF pF pF nC nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics
V SD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 35A ISD = 3.2A ISD = 35A, dISD/dt = 100A/s ISD = 35A, dISD/dt = 100A/s 1.25 1.0 23 9 V V ns nC
Notes: 1: Package current limitation is 35A. 2: Starting T J = 25C, L = 65uH, IAS = 28A, VDD = 27V, VGS = 10V. 3
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TC = 25C unless otherwise noted
1.2 50 CURRENT LIMITED BY PACKAGE 40 0.8 ID, DRAIN CURRENT (A) VGS = 10V 30 VGS = 4.5V 20
POWER DISSIPATION MULTIPLIER
1.0
0.6
0.4
0.2
10
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THERMAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
Figure 3. Normalized Maximum Transient Thermal Impedance
500 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A)
TC = 25o C FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
VGS = 4.5V 100 VGS = 10V
30 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TC = 25C unless otherwise noted
1000 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 100 10s 500 If R = 0 tAV = (L)(I AS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(I AS*R)/(1.3*RATED BVDSS - VDD) +1] 100
10
100s
IAS, AVALANCHE CURRENT (A)
STARTING T J = 25o C 10 STARTING TJ = 150o C
1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms 10ms DC 60
1 0.01
0.1 1 tAV, TIME IN AVALANCHE (ms)
10
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
80
80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 60 TJ = 25o C 40
VGS = 5V 60
VGS = 10V
VGS = 4V
40 VGS = 3V
20 TJ = 175o C 0 1.5 TJ = -55oC
20
TC = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 0.25 0.5 0.75 1.0 1.25 1.5
0 2.0 2.5 3.0 3.5 VGS , GATE TO SOURCE VOLTAGE (V) 4.0 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
30 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 35A rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 25 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
Figure 8. Saturation Characteristics
1.8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.6
1.4
20
1.2
1.0
15
ID = 1A
0.8 VGS = 10V, ID = 35A
10 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
0.6 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TC = 25C unless otherwise noted
1.2 VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.10 ID = 250A
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.05
0.8
1.00
0.6
0.95
0.4 -80
-40
0
40
80
120
160
200
0.90 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
2000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V)
CISS = CGS + CGD 1000 C, CAPACITANCE (pF)
VDD = 15V 8
COSS CDS + C GD
6
CRSS = CGD
4 WAVEFORMS IN DESCENDING ORDER: ID = 35A ID = 1A 0 5 10 Qg, GATE CHARGE (nC) 15 20
100 VGS = 0V, f = 1MHz 50 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
2
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG IAS VDD VDD tP VDS
+
IAS 0.01 0 tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS VDD L VGS VDS Qg(5) VDD DUT Ig(REF) VGS = 1V 0 Qg(TH) Qgs Ig(REF) 0 Qgd Qgs2 VGS = 5V Qg(TOT) VGS VGS = 10V
+
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON td(ON) RL VDS
+
tOFF td(OFF) tr tf 90%
90%
VGS
VDD DUT 0
10%
10%
RGS VGS VGS 0 10% 50% PULSE WIDTH
90% 50%
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM , in an application. Therefore the application's ambient temperature, TA (oC), and thermal resistance RJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
(T -T ) JM A P D M = ----------------------------R JA
125 RJA = 33.32+ 23.84/(0.268+Area) EQ.2 100 RJA (oC/W) RJA = 33.32+ 154/(1.73+Area) EQ.3
75
(EQ. 1)
50
In using surface mount devices such as the TO-252 package, the environment in which it is applied will have a significant influence on the part's current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the designer's preliminary application evaluation. Figure 21 defines the RJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads. R JA
25 0.01 (0.0645)
0.1 (0.645)
1 (6.45)
10 (64.5)
AREA, TOP COPPER AREA in2 (cm2)
Figure 21. Thermal Resistance vs Mounting Pad Area
= 33.32 + ------------------------------------
23.84 ( 0.268 + Area ) 154 ( 1.73 + Area )
(EQ. 2)
Area in Inches Squared
R
JA
= 33.32 + ---------------------------------
(EQ. 3)
Area in Centimeters Squared
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
PSPICE Electrical Model
.SUBCKT FDD8878 2 1 3 ; rev February 2004 Ca 12 8 8.6e-10 Cb 15 14 7.2e-10 Cin 6 8 8e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 32.97 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 5.4e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate 1 9 54 RLdrain 2 5 10 RLsource 3 7 20 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 6.9e-3 Rgate 9 20 3.1 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 2.7e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*125),5))} .MODEL DbodyMOD D (IS=2.6E-12 IKF=8 N=1.01 RS=6.4e-3 TRS1=8e-4 TRS2=2e-7 + CJO=3.4e-10 M=0.53 TT=1e-17 XTI=2) .MODEL DbreakMOD D (RS=1.4 TRS1=1e-3 TRS2=-5e-6) .MODEL DplcapMOD D (CJO=3.4e-10 IS=1e-30 N=10 M=0.39) .MODEL MmedMOD NMOS (VTO=1.75 KP=7 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.1 T_ABS=25) .MODEL MstroMOD NMOS (VTO=2.2 KP=100 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25) .MODEL MweakMOD NMOS (VTO=1.45 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=31 RS=0.1 T_ABS=25) .MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7) .MODEL RdrainMOD RES (TC1=1e-4 TC2=7.5e-6) .MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6) .MODEL RsourceMOD RES (TC1=1.3e-2 TC2=2e-6) .MODEL RvthresMOD RES (TC1=-1.7e-3 TC2=-8e-6) .MODEL RvtempMOD RES (TC1=-2.2e-3 TC2=2e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.5 VOFF=-3.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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CA S1A 12 13 8 S1B 13 + EGS 6 8 EDS S2A 14 13 S2B CB + 5 8 8 RVTHRES 14 IT 15 17 GATE 1 RLGATE CIN 10 RSLC1 51 ESLC 50 RDRAIN EVTHRES + 19 8 6 MSTRO LSOURCE 8 RSOURCE RLSOURCE RBREAK 18 RVTEMP 19 VBAT + 22 7 SOURCE 3 21 16 RLDRAIN DBREAK 11 + 17 EBREAK 18 MWEAK MMED LDRAIN DPLCAP 5 DRAIN 2
RSLC2
5 51 ESG + LGATE EVTEMP RGATE + 18 22 9 20 6 8 -
(c)2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4
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+
DBODY
FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
SABER Electrical Model
rev February 2004 template FDD8878 n2,n1,n3 =m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=2.6e-12,ikf=8,nl=1.01,rs=6.4e-3,trs1=8e-4,trs2=2e-7,cjo=3.4e-10,m=0.53,tt=1e-17,xti=2) dp..model dbreakmod = (rs=1.4,trs1=1e-3,trs2=-5e-6) dp..model dplcapmod = (cjo=3.4e-10,isl=10e-30,nl=10,m=0.39) m..model mmedmod = (type=_n,vto=1.75,kp=7,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.2,kp=100,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.45,kp=0.03,is=1e-30, tox=1,rs=0.1) LDRAIN sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4.5,voff=-3.5) DPLCAP 5 DRAIN 2 sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4.5) 10 sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2,voff=-1) RLDRAIN RSLC1 sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-1,voff=-2) 51 c.ca n12 n8 = 8.6e-10 RSLC2 c.cb n15 n14 = 7.2e-10 ISCL c.cin n6 n8 = 8e-10 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod spe.ebreak n11 n7 n17 n18 = 32.97 GATE spe.eds n14 n8 n5 n8 = 1 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 i.it n8 n17 = 1 l.lgate n1 n9 = 5.4e-9 l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 2e-9
CA 12 S1B 13 + EGS 6 8 EDS LGATE ESG + EVTEMP RGATE + 18 22 9 20 6 MSTRO CIN 8 6 8 EVTHRES + 19 8 50 RDRAIN 21 16 MWEAK MMED EBREAK + 17 18 DBREAK 11 DBODY
RLGATE
LSOURCE 7 RLSOURCE SOURCE 3
RSOURCE S1A 13 8 S2A 14 13 S2B CB + 5 8 8 RVTHRES 14 IT VBAT + 22 15 17 RBREAK 18 RVTEMP 19
res.rlgate n1 n9 = 54 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 20
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7 res.rdrain n50 n16 = 6.9e-3, tc1=1e-4,tc2=7.5e-6 res.rgate n9 n20 = 3.1 res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2.7e-3, tc1=1.3e-2,tc2=2e-6 res.rvthres n22 n8 = 1, tc1=-1.7e-3,tc2=-8e-6 res.rvtemp n18 n19 = 1, tc1=-2.2e-3,tc2=2e-7 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/125))** 5)) } }
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FDD8878 / FDU8878 N-Channel PowerTrench(R) MOSFET
PSPICE Thermal Model
REV 23 February 2004 FDD8878T CTHERM1 TH 6 3.5e-4 CTHERM2 6 5 5e-4 CTHERM3 5 4 2.5e-3 CTHERM4 4 3 2.7e-3 CTHERM5 3 2 5e-3 CTHERM6 2 TL 1e-2 RTHERM1 TH 6 2.9e-1 RTHERM2 6 5 3.5e-1 RTHERM3 5 4 4.5e-1 RTHERM4 4 3 5.2e-1 RTHERM5 3 2 6.9e-1 RTHERM6 2 TL 7e-1
th
JUNCTION
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDD8878T template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =3.5e-4 ctherm.ctherm2 6 5 =5e-4 ctherm.ctherm3 5 4 =2.5e-3 ctherm.ctherm4 4 3 =2.7e-3 ctherm.ctherm5 3 2 =5e-3 ctherm.ctherm6 2 tl =1e-2 rtherm.rtherm1 th 6 =2.9e-1 rtherm.rtherm2 6 5 =3.5e-1 rtherm.rtherm3 5 4 =4.5e-1 rtherm.rtherm4 4 3 =5.2e-1 rtherm.rtherm5 3 2 =6.9e-1 rtherm.rtherm6 2 tl =7e-1 }
RTHERM3 CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4
www.fairchildsemi.com

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